| PART |
Description |
Maker |
| K9WAG08U1A-I K9WAG08U1A-Y K9NBG08U5A K9NBG08U5A-P |
2G X 8 FLASH 2.7V PROM, 20 ns, PDSO48
4G X 8 FLASH 2.7V PROM, 30 ns, PDSO48 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48
1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
|
SEMIKRON
http://
Samsung semiconductor
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K9F4008W0A K9F4008W0A- K9F4008W0A-TCB0 K9F4008W0A- |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
512K x 8 bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F3208W0A- K9F3208W0A-TCB0 K9F3208W0A-TIB0 K9F400 |
512K x 8 bit NAND Flash Memory
4M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY27UH088G2M HY27UH088GDM |
8G-Bit NAND Flash Memory
|
Hynix Semiconductor
|
| KM29V16000AR |
2M X 8 BIT NAND FLASH MEMORY
|
Samsung semiconductor
|
| KM29V64001TS KM29V64001RS |
8M X 8 BIT NAND FLASH MEMORY
|
Samsung semiconductor
|
| K9F6408U0B K9F6408U0B-TCB0 K9F6408U0B-TIB0 |
8M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F1208U0M-YIB0 K9F1208U0M-YCB0 DSK9F1208U0M |
64M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F2808U0C K9F2808U0C-F K9F2808U0C-FCB0 K9F2808U0C |
16M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM29U128IT KM29U128T |
16M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
